R6520KNX3

R6520KNX3 Nch 650V 20A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.205Ω ±20A 220W lFeatures 1) Low on-resistance 2) Ultra Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-220AB lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Tube Packing code C16 Marking R6520KNX3 Quantity (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 650 V ±20 A ±60 A Gate - Source voltage Static AC (f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C) Junction temperature Operating junction and storage temperature range IAS EAS*3 PD Tj Tstg 3.4 A 444 mJ 220 W 150 ℃ -55 to +150 ℃ www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 1/11 20201022 - Rev.002 R6520KNX3 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Datasheet Symbol RthJC*4 RthJA Tsold Values Unit Min. Typ. Max. - - 0.57 ℃/W - - 80 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance V...