R6524ENZ1

R6524ENZ1 Nch 650V 24A Power MOSFET Datasheet lOutline VDSS 650V TO-247 RDS(on)(Max.) ID PD 0.185Ω ±24A 245W e lFeatures 1) Low on-resistance t 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit le lApplication Switching lPackaging specifications Packing Packing code oMarking Basic ordering unit (pcs) s lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage b Continuous drain current (Tc = 25°C) Pulsed drain current VDSS 650 ID*1 ±24 IDP*2 ±72 OGate - Source voltage static ±20 AC(f＞1Hz) VGSS ±30 Tube C9 R6524ENZ1 450 Unit V A A V V Avalanche current, single pulse IAS 4.1 A Avalanche energy, single pulse EAS*3 654 mJ Power dissipation (Tc = 25°C) Junction temperature Operating junction and storage temperature range PD 245 W Tj 150 ℃ Tstg -55 to +150 ℃ www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 1/10 20170929 - Rev.002 R6524ENZ1 Datasheet lThermal resistance Parameter Symbol Values Unit Min. Typ. Max. Thermal resistance, junction - case RthJC*4 - - 0.51 ℃/W Thermal resistance, junction - ambient RthJA - - 30 ℃/W Soldering temperature, wavesoldering for 10s Tsold - - 265 ℃ e lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions t Drain - Source breakdown voltage le Zero gate voltage drain current Gate - Source leakage current o Gate threshold voltage Static drain - source s o...