Power MOSFET
R6530ENZ1
Nch 650V 30A Power MOSFET
Datasheet
lOutline
VDSS
650V
TO-247
RDS(on)(Max.) ID PD
0.140Ω ±30A 3...
Description
R6530ENZ1
Nch 650V 30A Power MOSFET
Datasheet
lOutline
VDSS
650V
TO-247
RDS(on)(Max.) ID PD
0.140Ω ±30A 305W
e lFeatures
1) Low on-resistance
t 2) Fast switching speed
3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lInner circuit
le lApplication
Switching
lPackaging specifications Packing
Packing code
oMarking
Basic ordering unit (pcs)
s lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain - Source voltage
b Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
650
ID*1
±30
IDP*2
±90
OGate - Source voltage
static
±20
AC(f>1Hz)
VGSS
±30
Tube C9 R6530ENZ1 450
Unit V A A V V
Avalanche current, single pulse
IAS
5.2
A
Avalanche energy, single pulse
EAS*3
730
mJ
Power dissipation (Tc = 25°C)
PD
305
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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1/11
20170213 - Rev.002
R6530ENZ1
Datasheet
lThermal resistance
Parameter
Symbol
Values Unit
Min. Typ. Max.
Thermal resistance, junction - case
RthJC*4
-
- 0.41 ℃/W
Thermal resistance, junction - ambient
RthJA
-
- 30 ℃/W
Soldering temperature, wavesoldering for 10s
Tsold
-
- 265 ℃
e lElectrical characteristics (Ta = 25°C)
Parameter
...
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