Power MOSFET
R6535KNZ4
Nch 650V 35A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.115Ω ±35A 379W
lFeatures
1) Low on-resistance 2...
Description
R6535KNZ4
Nch 650V 35A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.115Ω ±35A 379W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lOutline
TO-247G
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Tube
Packing code
C13
Marking
R6535KNZ4
Quantity (pcs)
600
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID*1 IDP*2
650
V
±35
A
±105
A
Gate - Source voltage
static
AC(f>1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse
IAS*3
6.6
A
Avalanche energy, single pulse
EAS*3
867
mJ
Power dissipation (Tc = 25°C)
PD
379
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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1/11
20200108 - Rev.002
R6535KNZ4
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC*4 RthJA Tsold
Values Unit
Min. Typ. Max.
-
- 0.33 ℃/W
-
- 30 ℃/W
-
- 265 ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values U...
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