isc N-Channel MOSFET Transistor
R8002ANX
FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.3Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
...
