Power MOSFET
RCJ081N20
Nch 200V 8.0A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
200V 770mW
8.0A 40W
lFeatures 1) Low on-res...
Description
RCJ081N20
Nch 200V 8.0A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
200V 770mW
8.0A 40W
lFeatures 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive
lAbsolute maximum ratings(Ta = 25°C) Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation Junction temperature
Tc = 25°C Ta = 25°C *4
Range of storage temperature
lOutline
(2) LPT(S) (SC-83)
(1) (3)
lInner circuit
(1) Gate (2) Drain (3) Source
*1 BODY DIODE
lPackaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Quantity (pcs)
Taping code
Marking
Taping 330 24 1,000 TL
RCJ081N20
Symbol
Value
Unit
VDSS
200
V
ID *1
8.0
A
ID *1
4.3
A
ID,pulse *2
32
A
VGSS
30
V
EAS *3
5.17
mJ
IAR *3
4.0
A
PD
40
W
PD
1.56
W
Tj
150
°C
Tstg
-55 to +150
°C
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2019.05 - Rev.B
RCJ081N20 lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient *4 Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC RthJA Tsold
Values Unit
Min. Typ. Max.
-
- 3.125 °C/W
-
-
80 °C/W
-
-
265 °C
lElectrical characteristics(T...
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