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RCJ160N20 Dataheets PDF



Part Number RCJ160N20
Manufacturers ROHM
Logo ROHM
Description Power MOSFET
Datasheet RCJ160N20 DatasheetRCJ160N20 Datasheet (PDF)

RCJ160N20 Nch 200V 16A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 200V 180m 16A 85W Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive Absolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Tc.

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RCJ160N20 Nch 200V 16A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 200V 180m 16A 85W Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive Absolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Tc = 100°C Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Tc = 25°C Ta = 25°C *4 Range of storage temperature Outline (2) LPT(S) (SC-83) (1) (3) Inner circuit (1) Gate ∗1 (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Quantity (pcs) Taping code Marking Taping 330 24 1,000 TL RCJ160N20 Symbol Value Unit VDSS 200 V ID *1 16 A ID *1 8.7 A ID,pulse *2 64 A VGSS 30 V EAS *3 20.7 mJ IAR *3 8.0 A PD 85 W PD 1.56 W Tj 150 °C Tstg 55 to 150 °C www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/12 2019.05 - Rev.C RCJ160N20 Thermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient *4 Soldering temperature, wavesoldering for 10s Data Sheet Symbol RthJC RthJA Tsold Values Unit Min. Typ. Max. - - 1.46 °C/W - - 80 °C/W - - 265 °C Electrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 200 - - V VDS = 200V, VGS = 0V - Tj = 25°C Zero gate voltage drain current IDSS VDS = 200V, VGS = 0V - Tj = 125°C - 10 A - 100 Gate - Source leakage current IGSS VGS = 30V, VDS = 0V - - 100 nA Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 3.25 - 5.25 V Static drain - source on - state resistance VGS = 10V, ID = 8.0A RDS(on) *5 VGS = 10V, ID = 8.0A Tj = 125°C - 135 180 m - 295 410 Forward transfer admittance gfs VDS = 10V, ID = 8.0A 4 8 - S www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/12 2019.05 - Rev.C RCJ160N20 Data Sheet Electrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Input capacitance Output capacitance Ciss Coss VGS = 0V VDS = 25V - 1370 - - 95 - pF Reverse transfer capacitance Crss f = 1MHz - 50 - Turn - on delay time td(on) *5 VDD ⋍ 100V, VGS = 10V - 27 - Rise time Turn - off delay time tr *5 td(off) *5 ID = 8.0A RL = 12.5 - 47 - ns - 42 - Fall time tf *5 RG = 10 - 17 - Gate Charge characteristics(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Total gate charge Gate - Source charge Gate - Drain charge Qg *5 Qgs *5 Qgd *5 VDD ⋍ 100V ID = 16A VGS = 10V - 26 - - 10 - nC - 11 - Gate plateau voltage V(plateau) VDD ⋍ 100V, ID = 16A - 7.0 - V Body diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Continuous source current Pulsed source current Forward voltage Reverse recovery time Reverse recovery charge IS *1 ISM *2 VSD *5 trr *5 Qrr *5 Tc = 25°C VGS = 0V, IS = 16A IS = 8.0A di/dt = 100A/s - - 16 A - - 64 A - - 1.5 V - 85 - ns - 300 - nC *1 Limited only by maximum temperature allowed. *2 Pw  10s, Duty cycle  1% *3 L ⋍ 500H, VDD = 50V, Rg = 25, starting Tj = 25°C *4 Mounted on a epoxy PCB FR4 (25mm × 27mm × 0.8mm) *5 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/12 2019.05 - Rev.C Power Dissipation : PD/PD max. [%] RCJ160N20 Electrical characteristic curves Fig.1 Power Dissipation Derating Curve 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [°C] Drain Current : ID [A] Data Sheet Fig.2 Maximum Safe Operating Area 100 PW = 100s PW = 1ms 10 1 Operation in this area is limited 0.1 by RDS(on) PW = 10ms Ta=25ºC Single Pulse 0.01 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 10 Ta=25ºC Single Pulse Rth(j-c)(t) = r(t)×Rth(ch-c) Rth(j-c) = 80ºC/W 1 0.1 0.01 0.0001 0.01 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 1 100 Pulse Width : PW [s] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/12 2019.05 - Rev.C RCJ160N20 Electrical characteristic curves Data Sheet Avalanche Current : IAS [A] Fig.4 Avalanche Current vs Inductive Load 100 VDD=50V,RG=25 VGF=10V,VGR=0V Starting Tch=25ºC 10 1 0.1 0.01 0.1 1 10 100 Coil Inductance : L [mH] Avalanche Energy : EAS / EAS max. [%] Fig.5 Avalanche Energy Derating Curve vs Junction Temperature 120 100 80 60 40 20 0 0 25 50 75 10.


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