Document
RCJ160N20
Nch 200V 16A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
200V 180m 16A
85W
Features 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive
Absolute maximum ratings(Ta = 25°C) Parameter
Drain - Source voltage
Continuous drain current Pulsed drain current
Tc = 25°C Tc = 100°C
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation Junction temperature
Tc = 25°C Ta = 25°C *4
Range of storage temperature
Outline
(2) LPT(S) (SC-83)
(1) (3)
Inner circuit
(1) Gate
∗1
(2) Drain
(3) Source
(1)
(2)
(3)
1 BODY DIODE
Packaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Quantity (pcs)
Taping code
Marking
Taping 330 24 1,000 TL
RCJ160N20
Symbol
Value
Unit
VDSS
200
V
ID *1
16
A
ID *1
8.7
A
ID,pulse *2
64
A
VGSS
30
V
EAS *3
20.7
mJ
IAR *3
8.0
A
PD
85
W
PD
1.56
W
Tj
150
°C
Tstg
55 to 150
°C
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1/12
2019.05 - Rev.C
RCJ160N20 Thermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient *4 Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC RthJA Tsold
Values Unit
Min. Typ. Max.
-
-
1.46 °C/W
-
-
80 °C/W
-
-
265 °C
Electrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA
200
-
-
V
VDS = 200V, VGS = 0V
-
Tj = 25°C
Zero gate voltage drain current
IDSS
VDS = 200V, VGS = 0V
-
Tj = 125°C
-
10
A
-
100
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
-
-
100 nA
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
3.25
-
5.25
V
Static drain - source on - state resistance
VGS = 10V, ID = 8.0A RDS(on) *5 VGS = 10V, ID = 8.0A
Tj = 125°C
-
135 180
m
-
295 410
Forward transfer admittance
gfs VDS = 10V, ID = 8.0A
4
8
-
S
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2/12
2019.05 - Rev.C
RCJ160N20
Data Sheet
Electrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Input capacitance Output capacitance
Ciss Coss
VGS = 0V VDS = 25V
-
1370
-
-
95
-
pF
Reverse transfer capacitance
Crss f = 1MHz
-
50
-
Turn - on delay time
td(on) *5 VDD ⋍ 100V, VGS = 10V
-
27
-
Rise time Turn - off delay time
tr *5 td(off) *5
ID = 8.0A RL = 12.5
-
47
-
ns
-
42
-
Fall time
tf *5
RG = 10
-
17
-
Gate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Total gate charge Gate - Source charge Gate - Drain charge
Qg *5 Qgs *5 Qgd *5
VDD ⋍ 100V ID = 16A VGS = 10V
-
26
-
-
10
-
nC
-
11
-
Gate plateau voltage
V(plateau) VDD ⋍ 100V, ID = 16A
-
7.0
-
V
Body diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Continuous source current Pulsed source current Forward voltage Reverse recovery time Reverse recovery charge
IS *1 ISM *2 VSD *5 trr *5 Qrr *5
Tc = 25°C
VGS = 0V, IS = 16A IS = 8.0A di/dt = 100A/s
-
-
16
A
-
-
64
A
-
-
1.5
V
-
85
-
ns
-
300
-
nC
*1 Limited only by maximum temperature allowed.
*2 Pw 10s, Duty cycle 1% *3 L ⋍ 500H, VDD = 50V, Rg = 25, starting Tj = 25°C
*4 Mounted on a epoxy PCB FR4 (25mm × 27mm × 0.8mm)
*5 Pulsed
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3/12
2019.05 - Rev.C
Power Dissipation : PD/PD max. [%]
RCJ160N20 Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
120 100
80 60 40 20
0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [°C]
Drain Current : ID [A]
Data Sheet
Fig.2 Maximum Safe Operating Area
100 PW = 100s PW = 1ms
10
1
Operation in this
area is limited
0.1
by RDS(on)
PW = 10ms
Ta=25ºC Single Pulse
0.01
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Normalized Transient Thermal Resistance : r(t)
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
10
Ta=25ºC Single Pulse Rth(j-c)(t) = r(t)×Rth(ch-c) Rth(j-c) = 80ºC/W
1
0.1
0.01 0.0001
0.01
top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single
1
100
Pulse Width : PW [s]
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2019.05 - Rev.C
RCJ160N20 Electrical characteristic curves
Data Sheet
Avalanche Current : IAS [A]
Fig.4 Avalanche Current vs Inductive Load
100 VDD=50V,RG=25 VGF=10V,VGR=0V Starting Tch=25ºC
10
1
0.1 0.01
0.1
1
10
100
Coil Inductance : L [mH]
Avalanche Energy : EAS / EAS max. [%]
Fig.5 Avalanche Energy Derating Curve vs Junction Temperature
120
100
80
60
40
20
0 0 25 50 75 10.