Power MOSFET
RCJ120N20
Nch 200V 12A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
200V 325m 12A
52W
Features 1) Low on-resi...
Description
RCJ120N20
Nch 200V 12A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
200V 325m 12A
52W
Features 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive
Absolute maximum ratings(Ta = 25°C) Parameter
Drain - Source voltage
Continuous drain current Pulsed drain current
Tc = 25°C Tc = 100°C
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation Junction temperature
Tc = 25°C Ta = 25°C *4
Range of storage temperature
Outline
(2) LPT(S) (SC-83)
(1) (3)
Inner circuit
(1) Gate
∗1
(2) Drain
(3) Source
1 BODY DIODE
(1)
(2)
(3)
Packaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Taping 330 24 1,000 TL
RCJ120N20
Symbol
Value
Unit
VDSS
200
V
ID *1
12
A
ID *1
6.5
A
ID,pulse *2
48
A
VGSS
30
V
EAS *3
11.6
mJ
IAR *3
6.0
A
PD
52
W
PD
1.56
W
Tj
150
°C
Tstg
55 to 150
°C
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1/12
2016.02 - Rev.B
RCJ120N20 Thermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient *4 Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC RthJA Tsold
Values Unit
Min. Typ. Max.
-
-
2.36 °C/W
-
-
80 °C/W
-
-
265 °C...
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