RCJ100N25

RCJ100N25 Nch 250V 10A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 320m 10A 85W Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive Absolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Tc = 100°C Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Tc = 25°C Ta = 25°C *4 Range of storage temperature Outline (2) LPT(S) (SC-83) (1) (3) Inner circuit (1) Gate ∗1 (2) Drain (3) Source 1 BODY DIODE (1) (2) (3) Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 330 24 1,000 TL RCJ100N25 Symbol Value Unit VDSS 250 V ID *1 10 A ID *1 5.4 A ID,pulse *2 40 A VGSS 30 V EAS *3 7.29 mJ IAR *3 5.0 A PD 85 W PD 1.56 W Tj 150 °C Tstg 55 to 150 °C www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/12 2016.02 - Rev.B RCJ100N25 Thermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient *4 Soldering temperature, wavesoldering for 10s Data Sheet Symbol RthJC RthJA Tsold Values Unit Min. Typ. Max. - - 1.46 °C/W - - 80 °C/W - - 265 °C ...