Power MOSFET
RCJ100N25
Nch 250V 10A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
250V 320m
10A 85W
Features 1) Low on-resis...
Description
RCJ100N25
Nch 250V 10A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
250V 320m
10A 85W
Features 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive
Absolute maximum ratings(Ta = 25°C) Parameter
Drain - Source voltage
Continuous drain current Pulsed drain current
Tc = 25°C Tc = 100°C
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation Junction temperature
Tc = 25°C Ta = 25°C *4
Range of storage temperature
Outline
(2) LPT(S) (SC-83)
(1) (3)
Inner circuit
(1) Gate
∗1
(2) Drain
(3) Source
1 BODY DIODE
(1)
(2)
(3)
Packaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Taping 330 24 1,000 TL
RCJ100N25
Symbol
Value
Unit
VDSS
250
V
ID *1
10
A
ID *1
5.4
A
ID,pulse *2
40
A
VGSS
30
V
EAS *3
7.29
mJ
IAR *3
5.0
A
PD
85
W
PD
1.56
W
Tj
150
°C
Tstg
55 to 150
°C
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1/12
2016.02 - Rev.B
RCJ100N25 Thermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient *4 Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC RthJA Tsold
Values Unit
Min. Typ. Max.
-
-
1.46 °C/W
-
-
80 °C/W
-
-
265 °C
...
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