Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3936G
Silicon NPN epitaxial planar type...
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3936G
Silicon
NPN epitaxial planar type
For high-frequency amplification
■ Features
■ Package
Optimum for RF amplification, oscillation, mixing, and IF of
Code
FM/AM radios
SMini3-F2
S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
/ ■ Absolute Maximum Ratings Ta = 25°C
Marking Symbol: K Pin Name
1. Base 2. Emitter 3. Collector
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
5
V
a e cle con Collector current
IC
30
mA
lifecy , dis Collector power dissipation
PC
150
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
30
V
tinue anc Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
20
V
M is con inten Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
/Dis ma Forward current transfer ratio *
hFE VCE = 10 V, IC = 1 mA
70
250
D ance type, Transition frequency
fT
VCB = 10 V, IE = −1 mA, f = 200 MHz 150 230
MHz
ten ce Reverse transfer capaci...
