2SC3937G

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3937G Silicon NPN epitaxial planar type For UHF band low-noise amplification ■ Features ■ Package Low noise figure NF Code High forward transfer gain S21e2 SMini3-F2 High transition frequency fT S-Mini type package, allowing downsizing of the equipment Marking Symbol: 2W Pin Name and automatic insertion through the tape packing and the maga- 1. Base zine packing 2. Emitter /3. Collector ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit c e. d typ Collector-base voltage (Emitter open) VCBO 15 V n d stag tinue Collector-emitter voltage (Base open) VCEO 10 V a e cle con Emitter-base voltage (Collector open) VEBO 2 V lifecy , dis Collector current IC 80 mA n u ct ped Collector power dissipation PC 150 mW te tin Produ ed ty Junction temperature Tj 150 °C ur tinu Storage temperature Tstg −55 to +150 °C in n s followlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0 tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0 M is con inten Forward current transfer ratio hFE1 VCE = 8 V, IC = 20 mA /Dis ma hFE2 VCE = 1 V, IC = 3 mA D ance type, Transition frequency fT VCE = 8 V, IC = 20 mA, f = 0.8 GHz ten ce Collector output capacitance ain nan (Common base, input...