Transistors
2SC3940, 2SC3940A
Silicon NPN epitaxial planar type
For low-frequency output amplification and driver amplif...
Transistors
2SC3940, 2SC3940A
Silicon
NPN epitaxial planar type
For low-frequency output amplification and driver amplification Complementary to 2SA1534, 2SA1534A
5.0±0.2
Unit: mm
4.0±0.2
8.0±0.2
■ Features
0.7±0.1
0.7±0.2 13.5±0.5
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage 2SC3940 VCBO
30
V
0.45+–00..12
0.45+–00..115
e (Emitter open)
2SC3940A
60
c type) Collector-emitter voltage 2SC3940 VCEO
25
2.3±0.2
V
n d ge. ed (Base open)
2SC3940A
50
le sta ntinu Emitter-base voltage (Collector open) VEBO
5
V
a e cyc isco Collector current
IC
1
A
life d, d Peak collector current
ICP
1.5
A
n u duct type Collector power dissipation
PC
1
W
te tin Pro ued Junction temperature
Tj
150
°C
four ontin Storage temperature
Tstg −55 to +150 °C
in n followinnged disc ■ Electrical Characteristics Ta = 25°C ± 3°C
des , pla Parameter
Symbol
Conditions
a o inclu type Collector-base voltage c ued nce (Emitter open)
2SC3940 VCBO 2SC3940A
IC = 10 µA, IE = 0
M is ntin tena Collector-emitter voltage
isco ain (Base open)
2SC3940 VCEO 2SC3940A
IC = 2 mA, IB = 0
ce/D pe, m Emitter-base voltage (Collector open)
D nan e ty Collector-base cutoff current (Emitter open)
ainte nanc Forward current transfer ratio *1 Mmainte Collector-emitter saturation voltage*1 (planed Base-emitter saturation voltage*1
VEBO ICBO hFE1 *2...
