Power Transistors
2SC3980
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching ■ Fe...
Power
Transistors
2SC3980
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching ■ Features
(0.7)
15.0±0.3 11.0±0.2
Unit: mm 5.0±0.2
(3.2)
21.0±0.5 15.0±0.2
High-speed switching High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1
Wide safe operation area Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one
screw
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
/ ■ Absolute Maximum Ratings TC = 25°C
e e) Parameter
Symbol Rating
Unit
16.2±0.5 (3.5)
Solder Dip
c e. d typ Collector-base voltage (Emitter open) VCBO
900
V
n d stag tinue Collector-emitter voltage (E-B short) VCES
900
V
a e cle con Collector-emitter voltage (Base open) VCEO
800
V
lifecy , dis Emitter-base voltage (Collector open) VEBO
7
V
n u ct ped Base current
IB
2
A
te tin Produ ed ty Collector current
IC
4
A
ur tinu Peak collector current
ICP
6
A
ing fo iscon Collector power
PC
70
W
in n llow d d dissipation
Ta = 25°C
3.0
s fo lane Junction temperature
Tj
150
°C
a o lude e, p Storage temperature
Tstg −55 to +150 °C
c tinued incance typ ■ Electrical Characteristics TC = 25°C ± 3°C
M is con inten Parameter
Symbol
Conditions
/Dis ma Collector-emitter voltage (Base open)
D ance type, Collector-base cutoff current (Emitter open)
ten ce Emitter-base cutoff current (Collector open) Main tenan Forward current transfer ratio d main Collector-emitter saturation...