Power Transistors
2SC4359
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching ■ Features
(0.7)
15.0±0.3 11.0±0.2
Unit: mm 5.0±0.2
(3.2)
High-speed switching
21.0±0.5 15.0±0.2
High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1
Wide safe oeration area Satisfactory linearity of forward current transfe...
