Transistors
2SC4391
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SA1674
...
Transistors
2SC4391
Silicon
NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SA1674
6.9±0.1 0.7 4.0
Unit: mm
2.5±0.1 (0.8)
(0.5)
(1.0) (0.2)
4.5±0.1
■ Features
Low collector-emitter saturation voltage VCE(sat)
0.65 max.
(1.0) 14.5±0.5
High collector-emitter voltage (Base open) VCEO Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
80
V
c type Collector-emitter voltage (Base open) VCEO
80
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
5
V
le sta ntinu Collector current
IC
1
A
a e cyc isco Peak collector current
ICP
1.5
A
life d, d Collector power dissipation *
PC
1
W
n u duct type Junction temperature
Tj
150
°C
te tin Pro ued Storage temperature
Tstg −55 to +150 °C
four ontin Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
0.45+–00..0150 2.5±0.5
1.05±0.05 2.5±0.5
0.45+–00..0150
123
1: Emitter 2: Collector 3: Base MT-2-A1 Package
in n es follopwliannged disc ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min
c ed in ce ty Collector-base voltage (Emitter open)
tinu nan Collector-emitter voltage (Base open)
M is iscon ainte Emitter-base voltage (Collector open)
e/D e, m Collector-base cutoff current (Emitter open)
D anc typ Forward current transfer ratio
Maintentenance Collector-emitter saturation vol...
