Power Transistors
2SC4545
Silicon NPN epitaxial planar type
For medium output power amplification
7.5±0.2
Unit: mm 4....
Power
Transistors
2SC4545
Silicon
NPN epitaxial planar type
For medium output power amplification
7.5±0.2
Unit: mm 4.5±0.2
3.8±0.2
■ Features
2.05±0.2 90˚
10.8±0.2
Allowing supply with the radial taping
0.65±0.1
0.85±0.1
2.5±0.1
1.0±0.1 0.8 C
0.8 C
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
16.0±1.0
0.7±0.1 1.15±0.2
0.7±0.1 1.15±0.2
/ Collector-base voltage (Emitter open) VCBO
50
V
0.5±0.1
0.4±0.1
e Collector-emitter voltage (Base open) VCEO
40
V
c type) Emitter-base voltage (Collector open) VEBO
5
V
n d ge. ed Collector current
IC
1.5
A
le sta ntinu Peak collector current
ICP
3
A
a e cyc isco Collector power dissipation
PC
1.5
W
life d, d Junction temperature
Tj
150
°C
n u duct type Storage temperature
Tstg −55 to +150 °C
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter 2: Collector 3: Base MT-3-A1 Package
inte ntins followlianngefdoudrisPcroontinued ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
inc typ Collector-base voltage (Emitter open)
c tinued ance Collector-emitter voltage (Base open) M is con inten Collector-base cutoff current (Emitter open)
/Dis ma Collector-emitter cutoff current (Base open)
D ance type, Emitter-base cutoff current (Collector open)
ten ce Forward current transfer ratio * ain nan Collector-emitter saturation voltage M ainte Base-emitter saturation voltage d m Transition frequency (plane Collector output capacitance
VCBO VCEO ICBO ICEO ...
