C4559

Power Transistors 2SC4559 Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching ■ Features 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 High-speed switching High collector-emitter voltage (Base open) VCEO φ 3.1±0.1 Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0.2 / ■ Absolute Maximum Ratings TC = 25°C 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+–00..12 Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 500 V c type Collector-emitter voltage (E-B short) VCES 500 V n d tage. ued Collector-emitter voltage (Base open) VCEO 400 V le s ontin Emitter-base voltage (Collector open) VEBO 7 V a elifecyc disc Base current IB 3 A n u t ed, Collector current IC 7 A roduc d typ Peak collector current ICP 15 A te tin ur P tinue Collector power dissipation PC 35 W fo on Ta = 25°C 2.0 wing disc Junction temperature Tj 150 °C in n follo ned Storage temperature Tstg −55 to +150 °C a o includestype, pla ■ Electrical Characteristics TC = 25°C ± 3°C c tinued ance Parameter Symbol Conditions M is con inten Collector-emitter voltage (Base open) /Dis ma Collector-base cutoff current (Emitter open) D ance type, Emitter-base cutoff current (Collector open) ten ce Forward current transfer ratio Mainaintenan Collector-emitter saturation voltage d m Base-emitter saturation voltage (plane Transition frequency VCEO ICBO I...