Transistors
2SC4562
Silicon NPN epitaxial planar type
For high-frequency amplification Complementary to 2SA1748
0.3+–0...
Transistors
2SC4562
Silicon
NPN epitaxial planar type
For high-frequency amplification Complementary to 2SA1748
0.3+–00..01
Unit: mm
0.15+–00..0150
(0.425)
3
■ Features
1.25±0.10 2.1±0.1 5˚
High transition frequency fT
Small collector output capacitance (Common base, input open cir-
cuited) Cob S-Mini type package, allowing downsizing of the equipment
/ and automatic insertion through the tape packing
1
2
(0.65) (0.65) 1.3±0.1 2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
e pe) Parameter
Symbol Rating
Unit
0.2±0.1
c e. d ty Collector-base voltage (Emitter open) VCBO
50
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
50
0 to 0.1 0.9±0.1 0.9–+00..12
V
a e cle con Emitter-base voltage (Collector open) VEBO
5
V
lifecy , dis Collector current
IC
50
mA
n u duct typed Collector power dissipation
PC
150
mW
te tin Pro ed Junction temperature
Tj
150
°C
four ntinu Storage temperature
Tstg −55 to +150 °C
10˚
1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package
Marking Symbol: AM
in n es follopwliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min
c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
50
M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
D anc t...
