Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4562G
Silicon NPN epitaxial planar type...
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4562G
Silicon
NPN epitaxial planar type
For high-frequency amplification Complementary to 2SA1748G
■ Features
■ Package
High transition frequency fT
Code
Small collector output capacitance (Common base, input open cir-
cuited) Cob S-Mini type package, allowing downsizing of the equipment
SMini3-F2 Marking Symbol: AM Pin Name
and automatic insertion through the tape packing
1: Base
/2: Emitter
■ Absolute Maximum Ratings Ta = 25°C
e pe) Parameter
Symbol Rating
Unit
c e. d ty Collector-base voltage (Emitter open) VCBO
50
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
50
V
a e cle con Emitter-base voltage (Collector open) VEBO
5
V
lifecy , dis Collector current
IC
50
mA
n u duct typed Collector power dissipation
PC
150
mW
te tin Pro ed Junction temperature
Tj
150
°C
four ntinu Storage temperature
Tstg −55 to +150 °C
3: Collector
in n es follopwliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min
c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
50
M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
D anc typ Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB ...
