Transistors
2SC4606
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Unit: mm
Complementary t...
Transistors
2SC4606
Silicon
NPN epitaxial planar type
For low-frequency driver amplification
Unit: mm
Complementary to 2SA1762
6.9±0.1 (1.5)
(1.5)
2.5±0.1 (1.0)
(1.0)
(0.4)
■ Features
4.5±0.1
3.5±0.1
High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of a low-frequency and 25 W to 30
R 0.7
R 0.9
W output amplifier
M type package allowing easy automatic and manual insertion
as well as stand-alone fixing to the printed circuit board
(0.85)
0.45±0.05
2.0±0.2
4.1±0.2
2.4±0.2
1.0±0.1
/0.55±0.1
■ Absolute Maximum Ratings Ta = 25°C
e pe) Parameter
Symbol Rating
Unit
1.25±0.05
c e. d ty Collector-base voltage (Emitter open) VCBO
80
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
80
V
a e cle con Emitter-base voltage (Collector open) VEBO
5
V
lifecy , dis Collector current
IC
0.5
A
n u duct typed Peak collector current te tin Pro ed Collector power dissipation *
ICP
1
A
PC
1
W
four ntinu Junction temperature
Tj
150
°C
ing isco Storage temperature
Tstg −55 to +150 °C
in n follow ed d Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.7 mm s lan in thickness
3
2
1
(2.5) (2.5)
a o includetype, p ■ Electrical Characteristics Ta = 25°C ± 3°C
c ued nce Parameter
Symbol
Conditions
Min Typ
M is ntin tena Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
80
isco ain Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
80
ce/D pe, m Emitter-bas...
