2SC4626J

Transistors 2SC4626J Silicon NPN epitaxial planar type 0.80±0.05 For high-frequency amplification 1.60+–00..0035 1.00±0.05 Unit: mm 0.12+–00..0013 ■ Features 3 (0.375) 0.85–+00..0035 1.60±0.05 5˚ Optimum for RF amplification of FM/AM radios High transition frequency fT 12 (0.80) SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.27±0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C 5˚ / Parameter Symbol Rating Unit 0 to 0.02 0.70–+00..0035 e Collector-base voltage (Emitter open) VCBO 30 V 0.10 max. pe) Collector-emitter voltage (Base open) VCEO 20 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 5 V sta tinu Collector current IC 30 mA a e cycle iscon Collector power dissipation PC 125 mW life d, d Junction temperature Tj 125 °C n u duct type Storage temperature Tstg −55 to +125 °C Marking Symbol: V 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package inte ntines follopwlianngefdoudrisPcroontinued ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1 µA tinu nan Forward current transfer ratio * hFE VCB = 10 V, IE = −1 mA 70 220  M is iscon ainte Transition frequency fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250 MHz e/D e, m Noise figure NF VCB = 10 V, IE = −1 mA, f = 5 MHz 2.8 4.0 dB D ...