Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4627J
Silicon NPN epitaxial planar type...
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4627J
Silicon
NPN epitaxial planar type
0.80±0.05
For high-frequency amplification
1.60+–00..0035 1.00±0.05
Unit: mm
0.12+–00..0013
■ Features
3
(0.375)
0.85–+00..0035 1.60±0.05 5˚
Optimum for RF amplification of FM/AM radios
High transition frequency fT
12
(0.80)
SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
0.27±0.02 (0.50)(0.50)
5˚
/ ■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
0 to 0.02 0.70–+00..0035
V
0.10 max.
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
V
a e cle con Collector current
IC
15
mA
lifecy , dis Collector power dissipation
PC
125
mW
n u duct typed Junction temperature
Tj
125
°C
te tin Pro ed Storage temperature
Tstg −55 to +125 °C
Marking Symbol: U
1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
30
V
tinue anc Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
3
V
M is con inten Base-emitter voltage
VBE VCB = 6 V, IE = −1 mA
720
mV
/Dis ma Forward current transfer ratio ...
