Transistors
2SC4655J
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features • Optimum for RF amp...
Transistors
2SC4655J
Silicon
NPN epitaxial planar type
For high-frequency amplification
■ Features Optimum for RF amplification, oscillation, mixing, and IF of
1.60+–00..0035 1.00±0.05
3
0.80±0.05
Unit: mm
0.12+–00..0013
(0.375)
0.85–+00..0035 1.60±0.05 5˚
FM/SAM radios
SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
12 0.27±0.02
(0.50)(0.50)
(0.80)
/ ■ Absolute Maximum Ratings Ta = 25°C
5˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
0 to 0.02 0.70–+00..0035
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
0.10 max.
n d stag tinue Emitter-base voltage (Collector open) VEBO
5
V
a e cle con Collector current
IC
30
mA
lifecy , dis Collector power dissipation
PC
125
mW
n u duct typed Junction temperature
Tj
125
°C
te tin Pro ed Storage temperature
Tstg −55 to +125 °C
1 : Base 2 : Emitter 3 : Collector
Marking Symbol: K
EIAJ : SC-89 SSMini3-F1 Package
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
30
V
tinue anc Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
20
V
M is con inten Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
/Dis ma Forward current transfer ratio *
hFE VCE = 10 V, IC = 1 mA
70
250
D ance type, ...
