Document
Transistors
2SC4656J
Silicon NPN epitaxial planar type
0.80±0.05
For high-frequency amplification Complementary to 2SA1791J
1.60+–00..0035 1.00±0.05
Unit: mm
0.12+–00..0013
(0.375)
0.85–+00..0035 1.60±0.05 5˚
3
■ Features
• High transition frequency fT
• Small collector output capacitance (Common base, input open circuited) Cob
• SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
12 0.27±0.02
(0.50)(0.50)
(0.80)
/5˚
■ Absolute Maximum Ratings Ta = 25°C
e pe) Parameter
Symbol Rating
Unit
0 to 0.02 0.70–+00..0035
0.10 max.
c e. d ty Collector-base voltage (Emitter open) VCBO
50
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
50
V
a e cle con Emitter-base voltage (Collector open) VEBO
5
V
lifecy , dis Collector current
IC
50
mA
n u duct typed Collector power dissipation
PC
125
mW
te tin Pro ed Junction temperature
Tj
125
°C
four ntinu Storage temperature
Tstg −55 to +125 °C
1 : Base 2 : Emitter 3 : Collector
EIAJ : SC-89 SSMini3-F1 Package
Marking Symbol: AM
in n es follopwliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min
c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
50
M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
D anc typ Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
inten ance Forward current transfer ratio *
hFE VCE = 10 V, IC = 2 mA
200
Ma inten Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
ma Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
ned Collector output capacitance (pla (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
Typ Max
0.1 100 500 0.06 0.3 250 1.5
Unit V V V µA µA V
MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification
Rank
Q
R
hFE
200 to 400 250 to 500
Publication date: September 2004
SJC00308AED
1
Collector power dissipation PC (mW)
2SC4656J
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
Collector current IC (mA)
PC Ta
140
120 100 80 60 40
IC VCE
60
Ta = 25°C 50
IB = 100 µA
90 µA
40
80 µA
70 µA 30
60 µA
50 µA 20
IC VBE
50 VCE = 10 V
40
30 Ta = 85°C
20
25°C −25°C
20
0
0
40
80
120
Ambient temperature Ta (°C)
10
0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V)
10
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V)
Forward current transfer ratio hFE
ce/ 1 nan ued 0.1 inte ntin 0.01 MaDisco 0.1
Coll2e5TVc°atC1oC=rE8c5(su°aCrtr)ent−I21CI50C°IC(Cm/ IAB)(=p1l0a1n0e0Md aminatienntea7456321nn0000000ac00000000ne1c/VDeCiEtsCy=copo1lel0neT,tVcaimtn=oh−uar228Fei55c5En°°°udCCCtre1ri0nenncatIlnuCcdICees(tymfpoAell),opwl1ian0n0gefdoudrisPcroon0d1.t011iun0cutCelidofelltceycyp1tco0elrCed-b,osadbtsaiesgvc2e0oo.lVntatgiCneBufTVe3=ad0C=1B2tMy5(p°HVCez))40
Collector output capacitance (Common base, input open circuited)
Cob
(pF)
2
SJC00308AED
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