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2SC4656J Dataheets PDF



Part Number 2SC4656J
Manufacturers Panasonic
Logo Panasonic
Description Silicon NPN Transistor
Datasheet 2SC4656J Datasheet2SC4656J Datasheet (PDF)

Transistors 2SC4656J Silicon NPN epitaxial planar type 0.80±0.05 For high-frequency amplification Complementary to 2SA1791J 1.60+–00..0035 1.00±0.05 Unit: mm 0.12+–00..0013 (0.375) 0.85–+00..0035 1.60±0.05 5˚ 3 ■ Features • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 12 0.27±0.02 (0.50)(0.50) (0.80) /5˚ ■ Absolute.

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Transistors 2SC4656J Silicon NPN epitaxial planar type 0.80±0.05 For high-frequency amplification Complementary to 2SA1791J 1.60+–00..0035 1.00±0.05 Unit: mm 0.12+–00..0013 (0.375) 0.85–+00..0035 1.60±0.05 5˚ 3 ■ Features • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 12 0.27±0.02 (0.50)(0.50) (0.80) /5˚ ■ Absolute Maximum Ratings Ta = 25°C e pe) Parameter Symbol Rating Unit 0 to 0.02 0.70–+00..0035 0.10 max. c e. d ty Collector-base voltage (Emitter open) VCBO 50 V n d stag tinue Collector-emitter voltage (Base open) VCEO 50 V a e cle con Emitter-base voltage (Collector open) VEBO 5 V lifecy , dis Collector current IC 50 mA n u duct typed Collector power dissipation PC 125 mW te tin Pro ed Junction temperature Tj 125 °C four ntinu Storage temperature Tstg −55 to +125 °C 1 : Base 2 : Emitter 3 : Collector EIAJ : SC-89 SSMini3-F1 Package Marking Symbol: AM in n es follopwliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 50 M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 D anc typ Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 inten ance Forward current transfer ratio * hFE VCE = 10 V, IC = 2 mA 200 Ma inten Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA ma Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz ned Collector output capacitance (pla (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz Typ Max 0.1 100 500 0.06 0.3 250 1.5 Unit V V V µA µA  V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE 200 to 400 250 to 500 Publication date: September 2004 SJC00308AED 1 Collector power dissipation PC (mW) 2SC4656J Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) Collector current IC (mA) PC  Ta 140 120 100 80 60 40 IC  VCE 60 Ta = 25°C 50 IB = 100 µA 90 µA 40 80 µA 70 µA 30 60 µA 50 µA 20 IC  VBE 50 VCE = 10 V 40 30 Ta = 85°C 20 25°C −25°C 20 0 0 40 80 120 Ambient temperature Ta (°C) 10 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V) Forward current transfer ratio hFE ce/ 1 nan ued 0.1 inte ntin 0.01 MaDisco 0.1 Coll2e5TVc°atC1oC=rE8c5(su°aCrtr)ent−I21CI50C°IC(Cm/ IAB)(=p1l0a1n0e0Md aminatienntea7456321nn0000000ac00000000ne1c/VDeCiEtsCy=copo1lel0neT,tVcaimtn=oh−uar228Fei55c5En°°°udCCCtre1ri0nenncatIlnuCcdICees(tymfpoAell),opwl1ian0n0gefdoudrisPcroon0d1.t011iun0cutCelidofelltceycyp1tco0elrCed-b,osadbtsaiesgvc2e0oo.lVntatgiCneBufTVe3=ad0C=1B2tMy5(p°HVCez))40 Collector output capacitance (Common base, input open circuited) Cob (pF) 2 SJC00308AED Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change withou.


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