Transistors
2SC4691
Silicon NPN epitaxial planar type
For high-speed switching
Unit: mm
■ Features
• Low collector-em...
Transistors
2SC4691
Silicon
NPN epitaxial planar type
For high-speed switching
Unit: mm
■ Features
Low collector-emitter saturation voltage VCE(sat) SS-Mini type package, allowing downsizing of the equipment and
0.2+–00..015 3
0.15+–00..015
0.8±0.1 1.6±0.15
1˚
automatic insertion through the tape packing
0.2±0.1
(0.4)
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
1
2
(0.5) (0.5)
1.0±0.1 1.6±0.1
5˚
e Collector-base voltage (Emitter open) VCBO
40
V
pe) Collector-emitter voltage (E-B short) VCES
40
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
5
0 to 0.1
0.45±0.1
(0.3)
0.75±0.15
V
sta tinu Collector current
IC
100
mA
a e cycle iscon Peak collector current
ICP
300
mA
life d, d Collector power dissipation
PC
125
mW
n u duct type Junction temperature
Tj
125
°C
te tin Pro ed Storage temperature
Tstg −55 to +125 °C
1: Base 2: Emitter 3: Collector EIAJ: SC-75 SSMini3-G1 Package
Marking Symbol: 2Y
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min
c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0
tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0
M is con inten Forward current transfer ratio *
hFE VCE = 1 V, IC = 10 mA
60
/Dis ma Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
D ance type, Base-emitter saturation voltage
VBE(sat) ...
