Document
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4691G
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
■ Package
• Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and
• Code SSMini3-F3
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
• Marking Symbol: 2Y • Pin Name
1. Base 2. Emitter 3. Collector
e Collector-base voltage (Emitter open) VCBO
40
V
pe) Collector-emitter voltage (E-B short) VCES
40
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
5
V
sta tinu Collector current
IC
100
mA
a e cycle iscon Peak collector current
ICP
300
mA
life d, d Collector power dissipation
PC
125
mW
n u duct type Junction temperature
Tj
125
°C
te tin Pro ed Storage temperature
Tstg −55 to +125 °C
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min
c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0
tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0
M is con inten Forward current transfer ratio *
hFE VCE = 1 V, IC = 10 mA
60
/Dis ma Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
D ance type, Base-emitter saturation voltage
VBE(sat) IC = 10 mA, IB = 1 mA
ten ce Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz
ain nan Collector output capacitance M inte (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
d ma Turn-on time
ton Refer to the measurement circuit
(plane Turn-off time
toff
Typ Max
0.1
0.1
200
0.17 0.25
1.0
450
2
6
17 17
Unit µA µA V V MHz pF
ns ns
Storage time
tstg
10
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification
Rank
Q
R
No-rank
hFE
60 to 120
90 to 200
60 to 200
Product of no-rank is not classified and have no indication for rank.
Publication date: May 2007
SJC00394AED
1
2SC4691G
This product complies with the RoHS Directive (EU 2002/95/EC).
Collector power dissipation PC (mW)
Measurement circuit ton , toff test circuit
VIN = 10 V 3.3 kΩ
220 Ω
50 Ω
3.3 kΩ VBB = −3 V
0.1 µF VOUT
50 Ω
VCC = 3 V
tstg test circuit
A 910 Ω VIN = 10 V 0.1 µF 500 Ω
50 Ω
500 Ω VBB = 2 V
0.1 µF VOUT
1 kΩ 90 Ω
VCC = 10 V
10%
VIN
10%
10% VIN
90%
VOUT
90%
ton
toff
VOUT tstg
10%
(Waveform at A)
Collector current IC (mA)
e/ pe) PC Ta c ty 150 n dle stage.ntinued 125 a elifecyc , disco 100 n uroduct d typed 75 te tinfourP ntinue 50 in n llowing ddisco 25
des fo , plane 0
a o clu pe 0 25 50 75 100 125 150 c d in e ty Ambient temperature Ta (°C)
IC VCE
250 Ta = 25°C
IB = 8 mA
200
7 mA
6 mA
5 mA
4 mA
150
3 mA
2 mA
100 1 mA
50
0 0123456 Collector-emitter voltage VCE (V)
Collector-emitter saturation voltage VCE(sat) (V)
VCE(sat) IC
1 IC / IB = 10
Ta = 75°C
25°C 0.1
−25°C
0.01 0.1
1
10
100 1 000
Collector current IC (mA)
M is/Discontimnuaeintenanc VBE(sat) IC
e e, 10
D anc typ IC/ IB = 10
(planeMd aminatienntenance 1
−25°C
hFE IC
160
VCE = 1 V
140 Ta = 75°C
120
100
25°C
80 −25°C
Cob
(pF)
Cob VCB
100 f = 1 MHz Ta = 25°C
10
Ta = 75°C
60
25°C
1
40
Collector output capacitance (Common base, input open circuited)
Forward current transfer ratio hFE
20
0.1
0.1
1
10
100
Collector current IC (mA)
0
0.1
1
10
100 1 000
Collector current IC (mA)
0.1 0 5 10 15 20 25 30 35 Collector-base voltage VCB (V)
Base-emitter saturation voltage VBE(sat) (V)
2
SJC00394AED
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3
Unit: mm
1.60
+0.05 −0.03
/ 0.26
+0.05 −0.02
tenantincueed 1 MaDiniscon (5°)
3
(0.50) 1.00
0 to 0.10
0.85
+0.05 −0.03
0.70
+0.05 −0.03
1.60 ±0.05
(5°) 0.375 ±0.05
±0(p.(00l5a.5n20e)Md aminatiennteannacnec/Deitsycpoen,timnuaeindteinncalnucdeestyfpoell,opwlianngefdoudrisPcroondtiu0nc.u1te3lidf+−e00t..cy00y25pceled,sdtaisgceo.ntinued
(0.45)
type)
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