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2SC4691G Dataheets PDF



Part Number 2SC4691G
Manufacturers Panasonic
Logo Panasonic
Description Silicon NPN Transistor
Datasheet 2SC4691G Datasheet2SC4691G Datasheet (PDF)

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4691G Silicon NPN epitaxial planar type For high-speed switching ■ Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and • Code SSMini3-F3 automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit • Marking Symbol: 2Y • Pin Name 1. Base 2. Emitter 3. Collector e Collect.

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Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4691G Silicon NPN epitaxial planar type For high-speed switching ■ Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and • Code SSMini3-F3 automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit • Marking Symbol: 2Y • Pin Name 1. Base 2. Emitter 3. Collector e Collector-base voltage (Emitter open) VCBO 40 V pe) Collector-emitter voltage (E-B short) VCES 40 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 5 V sta tinu Collector current IC 100 mA a e cycle iscon Peak collector current ICP 300 mA life d, d Collector power dissipation PC 125 mW n u duct type Junction temperature Tj 125 °C te tin Pro ed Storage temperature Tstg −55 to +125 °C in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0 tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 M is con inten Forward current transfer ratio * hFE VCE = 1 V, IC = 10 mA 60 /Dis ma Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA D ance type, Base-emitter saturation voltage VBE(sat) IC = 10 mA, IB = 1 mA ten ce Transition frequency fT VCB = 10 V, IE = −10 mA, f = 200 MHz ain nan Collector output capacitance M inte (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz d ma Turn-on time ton Refer to the measurement circuit (plane Turn-off time toff Typ Max 0.1 0.1 200 0.17 0.25 1.0 450 2 6 17 17 Unit µA µA  V V MHz pF ns ns Storage time tstg 10 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R No-rank hFE 60 to 120 90 to 200 60 to 200 Product of no-rank is not classified and have no indication for rank. Publication date: May 2007 SJC00394AED 1 2SC4691G This product complies with the RoHS Directive (EU 2002/95/EC). Collector power dissipation PC (mW) Measurement circuit ton , toff test circuit VIN = 10 V 3.3 kΩ 220 Ω 50 Ω 3.3 kΩ VBB = −3 V 0.1 µF VOUT 50 Ω VCC = 3 V tstg test circuit A 910 Ω VIN = 10 V 0.1 µF 500 Ω 50 Ω 500 Ω VBB = 2 V 0.1 µF VOUT 1 kΩ 90 Ω VCC = 10 V 10% VIN 10% 10% VIN 90% VOUT 90% ton toff VOUT tstg 10% (Waveform at A) Collector current IC (mA) e/ pe) PC  Ta c ty 150 n dle stage.ntinued 125 a elifecyc , disco 100 n uroduct d typed 75 te tinfourP ntinue 50 in n llowing ddisco 25 des fo , plane 0 a o clu pe 0 25 50 75 100 125 150 c d in e ty Ambient temperature Ta (°C) IC  VCE 250 Ta = 25°C IB = 8 mA 200 7 mA 6 mA 5 mA 4 mA 150 3 mA 2 mA 100 1 mA 50 0 0123456 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) VCE(sat)  IC 1 IC / IB = 10 Ta = 75°C 25°C 0.1 −25°C 0.01 0.1 1 10 100 1 000 Collector current IC (mA) M is/Discontimnuaeintenanc VBE(sat)  IC e e, 10 D anc typ IC/ IB = 10 (planeMd aminatienntenance 1 −25°C hFE  IC 160 VCE = 1 V 140 Ta = 75°C 120 100 25°C 80 −25°C Cob (pF) Cob  VCB 100 f = 1 MHz Ta = 25°C 10 Ta = 75°C 60 25°C 1 40 Collector output capacitance (Common base, input open circuited) Forward current transfer ratio hFE 20 0.1 0.1 1 10 100 Collector current IC (mA) 0 0.1 1 10 100 1 000 Collector current IC (mA) 0.1 0 5 10 15 20 25 30 35 Collector-base voltage VCB (V) Base-emitter saturation voltage VBE(sat) (V) 2 SJC00394AED This product complies with the RoHS Directive (EU 2002/95/EC). SSMini3-F3 Unit: mm 1.60 +0.05 −0.03 / 0.26 +0.05 −0.02 tenantincueed 1 MaDiniscon (5°) 3 (0.50) 1.00 0 to 0.10 0.85 +0.05 −0.03 0.70 +0.05 −0.03 1.60 ±0.05 (5°) 0.375 ±0.05 ±0(p.(00l5a.5n20e)Md aminatiennteannacnec/Deitsycpoen,timnuaeindteinncalnucdeestyfpoell,opwlianngefdoudrisPcroondtiu0nc.u1te3lidf+−e00t..cy00y25pceled,sdtaisgceo.ntinued (0.45) type) Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon .


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