2SC4691J

Transistors 2SC4691J Silicon NPN epitaxial planar type 0.80±0.05 For high-speed switching 1.60+–00..0035 1.00±0.05 Unit: mm 0.12+–00..0013 ■ Features 3 (0.375) 0.85–+00..0035 1.60±0.05 5˚ Low collector-emitter saturation voltage VCE(sat) SS-Mini type package, allowing downsizing of the equipment and 12 (0.80) automatic insertion through the tape packing 0.27±0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C 5˚ / Parameter Symbol Rating Unit 0 to 0.02 0.70–+00..0035 e Collector-base voltage (Emitter open) VCBO 40 V 0.10 max. pe) Collector-emitter voltage (E-B short) VCES 40 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 5 V sta tinu Collector current IC 100 mA a e cycle iscon Peak collector current ICP 300 mA life d, d Collector power dissipation PC 125 mW n u duct type Junction temperature Tj 125 °C te tin Pro ed Storage temperature Tstg −55 to +125 °C 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package Marking Symbol: 2Y in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0 tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 M is con inten Forward current transfer ratio * hFE VCE = 1 V, IC = 10 mA 60 /Dis ma Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA D ance type, Base-emitter sa...