Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4808G
Silicon NPN epitaxial planar type...
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4808G
Silicon
NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
■ Package
Low noise figure NF
Code
High forward transfer gain S21e2
SSMini3-F3
High transition frequency fT SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
/ ■ Absolute Maximum Ratings Ta = 25°C
Marking Symbol: 3M Pin Name
1. Base 2. Emitter 3. Collector
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
15
V
c e. d ty Collector-emitter voltage (Base open) VCEO
10
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
2
V
a e cle con Collector current
IC
80
mA
lifecy , dis Collector power dissipation
PC
125
mW
n u duct typed Junction temperature
Tj
125
°C
te tin Pro ed Storage temperature
Tstg −55 to +125 °C
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
inc typ Collector-base voltage (Emitter open)
c tinued ance Collector-emitter voltage (Base open) M is con inten Collector-base cutoff current (Emitter open)
/Dis ma Emitter-base cutoff current (Collector open)
D ance type, Forward current transfer ratio *
ten ce Transition frequency ain nan Collector output capacitance M inte (Common base, input open circuited)
VCBO VCEO ICBO IEBO hFE
fT Cob
IC = 10 µA, IE = 0 IC = 100 µA, IB = 0 VCB = ...
