Transistors
2SC4809
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
•...
Transistors
2SC4809
Silicon
NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
High transition frequency fT Small collector output capacitance (Common base, input open cir-
0.2+–00..015 3
0.15+–00..015
0.8±0.1 1.6±0.15
1˚
0.2±0.1
cuited) Cob and reverse transfer capacitance (Common emitter) Crb SS-Mini type package, allowing downsizing of the equipment and
(0.4)
automatic insertion through the tape packing
/ ■ Absolute Maximum Ratings Ta = 25°C
1
2
(0.5) (0.5)
1.0±0.1 1.6±0.1
5˚
Parameter
Symbol Rating
Unit
e e) Collector-base voltage (Emitter open) VCBO
15
(0.3)
0.75±0.15
V
c e. d typ Collector-emitter voltage (Base open) VCEO
10
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
0 to 0.1
0.45±0.1
V
a e cle con Collector current
IC
50
mA
lifecy , dis Collector power dissipation
PC
125
mW
n u ct ped Junction temperature
Tj
125
°C
te tin Produ ed ty Storage temperature
Tstg −55 to +125 °C
1: Base 2: Emitter 3: Collector EIAJ: SC-75 SSMini3-G1 Package
Marking Symbol: 1S
wing foudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
in n s follo laned Parameter
Symbol
Conditions
a o lude e, p Collector-emitter voltage (Base open)
inc typ Emitter-base voltage (Collector open)
c tinued ance Collector-base cutoff current (Emitter open) M is con inten Forward current transfer ratio *1
/Dis ma hFE ratio *2
D tenancece type, Collector-emitter saturation voltage
ain nan Transition...
