Transistors
2SC4835
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
0.3+–00..01
Unit: mm
0.15+...
Transistors
2SC4835
Silicon
NPN epitaxial planar type
For UHF band low-noise amplification
0.3+–00..01
Unit: mm
0.15+–00..0150
(0.425)
■ Features
3
1.25±0.10 2.1±0.1 5˚
Low noise figure NF
High forward transfer gain S21e2
High transition frequency fT S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine packing
1
2
(0.65) (0.65) 1.3±0.1 2.0±0.2
0.2±0.1
/10˚
■ Absolute Maximum Ratings Ta = 25°C
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base voltage (Emitter open) VCBO
15
0 to 0.1 0.9±0.1 0.9–+00..12
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
10
V
a e cle con Emitter-base voltage (Collector open) VEBO
2
V
lifecy , dis Collector current
IC
80
mA
n u ct ped Collector power dissipation
PC
150
mW
te tin Produ ed ty Junction temperature
Tj
150
°C
ur tinu Storage temperature
Tstg −55 to +150 °C
1: Base 2: Emitter 3:Collector EIAJ: SC-70 SMini3-G1 Package
Marking Symbol: 3M
in n s followlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
15
V
tinue anc Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
10
V
M is con inten Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
1
µA
/Dis ma Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC...
