Transistors
2SC5019
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
Unit: mm
4.5±0.1
■ Featur...
Transistors
2SC5019
Silicon
NPN epitaxial planar type
For UHF band low-noise amplification
Unit: mm
4.5±0.1
■ Features
1.6±0.2
1.5±0.1
Low noise figure NF
2.5±0.1 3˚
4.0–+00..2205
High maximum unilateral power gain GUM
High transition frequency fT Mini Power type package, allowing downsizing of the equip-
ment and automatic insertion through the tape packing and the magazine packing
1 0.4±0.08
1.5±0.1
23 0.5±0.08
3˚
1.0–+00..21
0.4±0.04
/ ■ Absolute Maximum Ratings Ta = 25°C
e e) Parameter
Symbol Rating
Unit
2.6±0.1
0.4 max.
c e. d typ Collector-base voltage (Emitter open) VCBO
15
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
10
V
a e cle con Emitter-base voltage (Collector open) VEBO
2
V
lifecy , dis Collector current
IC
80
mA
n u ct ped Collector power dissipation *
PC
1
W
te tin Produ ed ty Junction temperature
Tj
150
°C
ur tinu Storage temperature
Tstg −55 to +150 °C
ing fo iscon Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
in n llow d d Absolute maximum rating without heat sink for PC is 0.5 W
45˚ 3.0±0.15
1: Base 2: Collector 3: Emitter MiniP3-F1 Package
Marking Symbol: 1W
a o includestyfpoe, plane ■ Electrical Characteristics Ta = 25°C ± 3°C
c tinued ance Parameter
Symbol
Conditions
M is con inten Collector-base voltage (Emitter open)
/Dis ma Collector-emitter voltage (Base open)
D ance type, Collector-base cutoff current (Emitter open)
ten ce Emitter-bas...
