Power Transistors
2SC5034
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Uni...
Power
Transistors
2SC5034
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
9.9±0.3 φ3.2±0.1
2.9±0.2
q High collector to emitter VCEO q High-speed switching
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
4.1±0.2 8.0±0.2 Solder Dip
/ s Absolute Maximum Ratings (TC=25˚C)
15.0±0.3
3.0±0.2
1.2±0.15 1.45±0.15
2.6±0.1 0.7±0.1
e ) Parameter
Symbol
Ratings
Unit
+0.5
13.7–0.2
c type Collector to base voltage
VCBO
500
V
n d tage. ued VCES
500
V
s tin Collector to emitter voltage
le on VCEO
400
V
a elifecyc disc Emitter to base voltage
VEBO
7
V
n u t ed, Peak collector current
ICP
15
A
roduc d typ Collector current
IC
7
A
te tin urP tinue Basecurrent
IB
3
A
g fo con Collector power TC=25°C
win dis dissipation
Ta=25°C
PC
35 W
2.0
in n follo ned Junction temperature a o ludes e, pla Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
c s tinued incance typ Electrical Characteristics (TC=25˚C)
M is con inten Parameter
Symbol
Conditions
/Dis , ma Collector cutoff current
D ance type Emitter cutoff current
inten nce Collector to emitter voltage Ma intena Forward current transfer ratio ed ma Collector to emitter saturation voltage (plan Base to emitter saturation voltage
ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat)
VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A IC...
