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NPN Transistor. C5104 Datasheet

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NPN Transistor. C5104 Datasheet






C5104 Transistor. Datasheet pdf. Equivalent




C5104 Transistor. Datasheet pdf. Equivalent





Part

C5104

Description

Silicon NPN Transistor



Feature


Power Transistors 2SC5104 Silicon NPN tr iple diffusion planar type For high br eakdown voltage high-speed switching 8 .5±0.2 Unit: mm 3.4±0.3 6.0±0.2 1 .0±0.1 ■ Features 3.0–+00..24 4. 4±0.5 14.4±0.5 10.0±0.3 1.5±0.1 High-speed switching 1.5–+00.4 High collector-base voltage (Emitter open) VCBO • Wide safe operation ar ea • Satisfactory linearity of forward.
Manufacture

Panasonic

Datasheet
Download C5104 Datasheet


Panasonic C5104

C5104; current transfer ratio hFE • N type p ackage enabling direct soldering of the radiating fin to the / printed circuit board, etc. of small electronic equipm ent 4.4±0.5 2.0±0.5 0 to 0.4 0.8± 0.1 2.54±0.3 1.4±0.1 5.08±0.5 R = 0 .5 R = 0.5 1.0±0.1 0.4±0.1 123 (8. 5) (6.0) 1.3 ■ Absolute Maximum Rati ngs TC = 25°C e e) Parameter Symbol Rating Unit (7.6) (1.5) c e..


Panasonic C5104

d typ Collector-base voltage (Emitter o pen) VCBO 500 V n d stag tinue Colle ctor-emitter voltage (E-B short) VCES 500 V a e cle con Collector-emitter v oltage (Base open) VCEO 400 V lifecy , dis Emitter-base voltage (Collector open) VEBO 7 V n u ct ped Base curre nt IB 1.2 A te tin Produ ed ty Coll ector current IC 3 A ur tinu Peak c ollector current .


Panasonic C5104

ICP 6 A ing fo iscon Collector power dissipation PC 30 W in n llow d d T a = 25°C 1.3 s fo lane Junction temp erature Tj 150 °C a o lude e, p St orage temperature Tstg −55 to +150 C (6.5) 1: Base 2: Collector 3: Emitt er N-G1 Package Note) Self-supported ty pe package is also prepared. c tinued inncance typ ■ Electrical Characteris tics TC = 25°C ± 3°C M i.

Part

C5104

Description

Silicon NPN Transistor



Feature


Power Transistors 2SC5104 Silicon NPN tr iple diffusion planar type For high br eakdown voltage high-speed switching 8 .5±0.2 Unit: mm 3.4±0.3 6.0±0.2 1 .0±0.1 ■ Features 3.0–+00..24 4. 4±0.5 14.4±0.5 10.0±0.3 1.5±0.1 High-speed switching 1.5–+00.4 High collector-base voltage (Emitter open) VCBO • Wide safe operation ar ea • Satisfactory linearity of forward.
Manufacture

Panasonic

Datasheet
Download C5104 Datasheet




 C5104
Power Transistors
2SC5104
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
8.5±0.2
Unit: mm
3.4±0.3
6.0±0.2
1.0±0.1
Features
High-speed switching
High collector-base voltage (Emitter open) VCBO
Wide safe operation area
Satisfactory linearity of forward current transfer ratio hFE
N type package enabling direct soldering of the radiating fin to the
/ printed circuit board, etc. of small electronic equipment
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0) 1.3
Absolute Maximum Ratings TC = 25°C
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base voltage (Emitter open) VCBO
500
V
n d stag tinue Collector-emitter voltage (E-B short) VCES
500
V
a e cle con Collector-emitter voltage (Base open) VCEO
400
V
lifecy , dis Emitter-base voltage (Collector open) VEBO
7
V
n u ct ped Base current
IB
1.2
A
te tin Produ ed ty Collector current
IC
3
A
ur tinu Peak collector current
ICP
6
A
ing fo iscon Collector power dissipation
PC
30
W
in n llow d d Ta = 25°C
1.3
s fo lane Junction temperature
Tj
150
°C
a o lude e, p Storage temperature
Tstg 55 to +150 °C
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
c tinued inncance typ Electrical Characteristics TC = 25°C ± 3°C
M is con inte Parameter
Symbol
Conditions
/Dis , ma Collector-emitter voltage (Base open)
D ance type Collector-base cutoff current (Emitter open)
inten nce Emitter-base cutoff current (Collector open)
Ma tena Forward current transfer ratio
ed main Collector-emitter saturation voltage
(plan Base-emitter saturation voltage
VCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
IC = 10 mA, IB = 0
VCB = 500 V, IE = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 0.1 A
VCE = 1 V, IC = 1 A
IC = 1.5 A, IB = 0.3 A
IC = 1.5 A, IB = 0.3 A
Min Typ Max Unit
400
V
100 µA
100 µA
15
15
30
1.0
V
1.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.2 A, f = 1 MHz
10
MHz
Turn-on time
ton
IC = 1.5 A
1.0
µs
Storage time
tstg
IB1 = 0.15 A, IB2 = − 0.3 A
3.0
µs
Fall time
tf
VCC = 200 V
0.3
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJD00139BED
1




 C5104
2SC5104
40
(1)
30
20
PC Ta
(1)TC=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
(PC=1.3W)
IC VCE
6
TC=25˚C
VCE(sat) IC
100
IC/IB=5
5
IB=500mA
10
TC=100˚C
25˚C
4
400mA
–25˚C
300mA
3
200mA
1
2
100mA
10
0.1
50mA
(2)
(3)
0
0
40
80
120
160
Ambient temperature Ta (°C)
1
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
0.01
0.1
1
10
100
Collector current IC (A)
ce/ 100
an ed 10
ten tinu 1
in n 0.1
a o 0.1
M isc 1000
D 100
pe) VBE(sat) IC
e. d ty IC/IB=5
1 000
hFE IC
VCE=5V
ur Prodtiuncutelidfetcyypceled,sdtaisgcontinue TC=–25˚C
wing fodiscon 25˚C
125˚C
cludes fpoell,oplaned 1
10
100
d in e ty Collector current IC (A)
100
TC=125˚C
–25˚C
25˚C
10
1
0.01
0.1
1
10
Collector current IC (A)
fT IC
100
VCE=10V
f=1MHz
TC=25˚C
10
1
0.1
0.01
0.1
1
10
Collector current IC (A)
/Discontimnuaeintenanc Cob VCB
ce pe, IE=0
an ty f=1MHz
(planeMd aminatienntenance TC=25˚C
ton , tstg , tf IC
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
(2IB1=–IB2)
10
VCC=200V
TC=25˚C
tstg
1
ton
Safe operation area
100
Non repetitive pulse
TC=25˚C
10
ICP
IC
t=1ms
t=10ms
1
t=300ms
10
tf
0.1
0.1
1
1
10
100
Collector-base voltage VCB (V)
0.01
0
1
2
3
4
Collector current IC (A)
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
2
SJD00139BED




 C5104
2SC5104
Safe operation area (Reverse bias)
4
L=100µH
IC/IB=5
(IB1=–IB2)
TC=25˚C
3
2
Safe operation area (Reverse bias) measurement circuit
L
T.U.T
IB1
IC
VIN
IB2
VCC
1
tw
0
0
200
400
600
800
Collector-emitter voltage VCE (V)
VCLAMP
ce/ 103
n d 102
na ue 10
te tin 1
101
in n 102
MaDisco 104
103
102
Rth t
10(1plaTniemMde1amitna(tiesn)nteann1((ac120))neWWc/Diietthhiotsauyc5tp0oh1×ee0na5,2t0tism×ni2numakeimndtAe1iln0nh3ceaalntuscdin((ee12k))sty1f0po4ell,opwlianngefdoudrisPcroondtiuncutelidfetcyypceled,sdtaisgceo.ntinued
type)
SJD00139BED
3



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