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C5419 Dataheets PDF



Part Number C5419
Manufacturers Panasonic
Logo Panasonic
Description Silicon NPN Transistor
Datasheet C5419 DatasheetC5419 Datasheet (PDF)

Transistors 2SC5419 Silicon NPN triple diffusion planar type For low-frequency output amplification 6.9±0.1 0.7 4.0 Unit: mm 2.5±0.1 (0.8) (0.5) (1.0) (0.2) 4.5±0.1 ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 0.65 max. (1.0) 14.5±0.5 • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 300 V pe) Collector-emitter voltage (Base ope.

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Transistors 2SC5419 Silicon NPN triple diffusion planar type For low-frequency output amplification 6.9±0.1 0.7 4.0 Unit: mm 2.5±0.1 (0.8) (0.5) (1.0) (0.2) 4.5±0.1 ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 0.65 max. (1.0) 14.5±0.5 • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 300 V pe) Collector-emitter voltage (Base open) VCEO 300 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 7 V sta tinu Collector current IC 70 mA a e cle con Peak collector current lifecy d, dis Collector power dissipation * ICP 100 mA PC 1 W n u duct type Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C four ntinu Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 0.45+–00..0150 2.5±0.5 1.05±0.05 2.5±0.5 0.45+–00..0150 123 1: Emitter 2: Collector 3: Base MT-2-A1 Package in n s followliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit inc typ Collector-emitter voltage (Base open) c tinued ance Emitter-base voltage (Collector open) M is con inten Collector-emitter cutoff current (Base open) /Dis ma Forward current transfer ratio * D ance type, Collector-emitter saturation voltage ten ce Transition frequency ain nan Collector output capacitance M inte (Common base, input open circuited) VCEO VEBO ICEO hFE VCE(sat) fT Cob IC = 100 µA, IB = 0 300 IE = 1 µA, IC = 0 7 VCE = 120 V, IB = 0 VCE = 10 V, IC = 5 mA 30 IC = 50 mA, IB = 5 mA VCB = 10 V, IE = −10 mA, f = 200 MHz 50 VCB = 10 V, IE = 0, f = 1 MHz V V 1 µA 220  1.2 V MHz 10 pF d ma Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. (plane 2. *: Rank classification Rank P Q R hFE 30 to 100 60 to 150 100 to 220 Publication date: February 2003 SJC00181CED 1 2SC5419 Collector power dissipation PC (W) Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) PC  Ta 1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 1.0 0.8 0.6 0.4 IC  VCE 120 Ta = 25°C 120 100 1.8 mA 1.6 mA 100 1.4 mA 1.2 mA IB = 2.0 mA 80 1.0 mA 80 0.8 mA 0.6 mA 60 60 0.4 mA 40 0.2 mA 40 IC  VBE VCE = 10 V 25°C Ta = 75°C −25°C 0.2 0 0 40 80 120 160 Ambient temperature Ta (°C) 20 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) ce/ 120 n d 100 a e 80 n u 60 te tin 40 20 in n 0 a o 0 M isc 300 D 250 200 150 Collector-emitter saturation voltage VCE(sat) (V) pe) IC  IB ge. ed ty VCE = 10 V sta tinu Ta = 25°C cludes fpoell,opwlianngefdoudrisPcroondtiuncutelidfetcyypceled, discon 0.4 0.8 1.2 1.6 2.0 2.4 d in e ty Base current IB (mA) VCE(sat)  IC 10 IC .


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