Document
Transistors
2SC5419
Silicon NPN triple diffusion planar type
For low-frequency output amplification
6.9±0.1 0.7 4.0
Unit: mm
2.5±0.1 (0.8)
(0.5)
(1.0) (0.2)
4.5±0.1
■ Features
• High collector-emitter voltage (Base open) VCEO
• High transition frequency fT
0.65 max.
(1.0) 14.5±0.5
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
300
V
pe) Collector-emitter voltage (Base open) VCEO
300
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
7
V
sta tinu Collector current
IC
70
mA
a e cle con Peak collector current
lifecy d, dis Collector power dissipation *
ICP
100
mA
PC
1
W
n u duct type Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
four ntinu Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
0.45+–00..0150 2.5±0.5
1.05±0.05 2.5±0.5
0.45+–00..0150
123
1: Emitter 2: Collector 3: Base MT-2-A1 Package
in n s followliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
inc typ Collector-emitter voltage (Base open)
c tinued ance Emitter-base voltage (Collector open) M is con inten Collector-emitter cutoff current (Base open)
/Dis ma Forward current transfer ratio *
D ance type, Collector-emitter saturation voltage
ten ce Transition frequency ain nan Collector output capacitance M inte (Common base, input open circuited)
VCEO VEBO ICEO hFE VCE(sat)
fT Cob
IC = 100 µA, IB = 0
300
IE = 1 µA, IC = 0
7
VCE = 120 V, IB = 0
VCE = 10 V, IC = 5 mA
30
IC = 50 mA, IB = 5 mA
VCB = 10 V, IE = −10 mA, f = 200 MHz 50
VCB = 10 V, IE = 0, f = 1 MHz
V
V
1
µA
220
1.2
V
MHz
10
pF
d ma Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. (plane 2. *: Rank classification
Rank
P
Q
R
hFE
30 to 100
60 to 150 100 to 220
Publication date: February 2003
SJC00181CED
1
2SC5419
Collector power dissipation PC (W)
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
PC Ta
1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
1.0
0.8
0.6
0.4
IC VCE
120
Ta = 25°C
120
100
1.8 mA
1.6 mA
100
1.4 mA
1.2 mA
IB = 2.0 mA
80
1.0 mA
80
0.8 mA
0.6 mA
60
60
0.4 mA
40
0.2 mA
40
IC VBE
VCE = 10 V
25°C
Ta = 75°C
−25°C
0.2
0
0
40
80
120
160
Ambient temperature Ta (°C)
20
0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V)
20
0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V)
ce/ 120 n d 100 a e 80 n u 60 te tin 40
20
in n 0 a o 0 M isc 300 D 250
200 150
Collector-emitter saturation voltage VCE(sat) (V)
pe) IC IB ge. ed ty VCE = 10 V sta tinu Ta = 25°C
cludes fpoell,opwlianngefdoudrisPcroondtiuncutelidfetcyypceled, discon 0.4 0.8 1.2 1.6 2.0 2.4 d in e ty Base current IB (mA)
VCE(sat) IC
10
IC .