Power Transistors
2SC5517
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5 φ 3.2±0.1
...
Power
Transistors
2SC5517
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3 5˚
5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
I Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer High-speed switching Wide area of safe operation (ASO)
5˚
(4.0)
5˚
2.0±0.2
5˚
/ 1.1±0.1
0.7±0.1
I Absolute Maximum Ratings TC = 25°C
5.45±0.3
e ) Parameter
Symbol Rating
Unit
18.6±0.5 (2.0)
Solder Dip
c type Collector to base voltage
VCBO
1 700
V
3.3±0.3
5.5±0.3
n d ge. ed Collector to emitter voltage
VCES
1 700
(2.0)
V
sta tinu Emitter to base voltage
VEBO
7
V
a e cle con Peak collector current
ICP
12
A
lifecy , dis Collector current
IC
6
A
n u ct ed Base current
IB
3
A
du typ Collector power TC = 25°C
PC
40
W
te tin Pro ued dissipation
Ta = 25°C
3
four ntin Junction temperature
Tj
150
°C
wing disco Storage temperature
Tstg
−55 to +150
°C
10.9±0.5
5˚ 12 3
1 : Base 2 : Collector 3 : Emitter TOP-3E-A1 Package
Internal Connection
C B
E
in ndes foll,oplaned I Electrical Characteristics TC = 25°C
a o inclu type Parameter
Symbol
Conditions
Min Typ Max Unit
c ed ce Collector cutoff current
ICBO
VCB = 1 000 V, IE = 0
50
µA
M is continuintenan Emitter to base voltage
/Dis ma Forward current transfer ratio
VEBO hFE
VCB = 1 700 V, IE = 0 IE = 500 mA, IC = 0 VCE = 5 V, IC = 4.5 A
1
mA
7
V
5
9
ce pe, Collec...
