Transistor
2SC5557
Silicon NPN epitaxial planar type
For low-noise RF amplifier
0.33+–00..0025
Unit: mm
0.10+–00..0025
3
0.15 min.
0.80±0.05 1.20±0.05
I Features
High transition frequency fT
5˚
High gain of 8.2 dB and low noise of 1.8 dB at 3 V
0.23+–00..0025
12
0.15 min.
Optimum for RF amplification of a portable telephone and pager
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