2SC5557

Transistor 2SC5557 Silicon NPN epitaxial planar type For low-noise RF amplifier 0.33+–00..0025 Unit: mm 0.10+–00..0025 3 0.15 min. 0.80±0.05 1.20±0.05 I Features High transition frequency fT 5˚ High gain of 8.2 dB and low noise of 1.8 dB at 3 V 0.23+–00..0025 12 0.15 min. Optimum for RF amplification of a portable telephone and pager (0.40) (0.40) 0.80±0.05 1.20±0.05 I Absolute Maximum Ratings Ta = 25°C 5˚ Parameter Symbol Rating Unit / Collector to base voltage VCBO 9 V 0 to 0.01 0.52±0.03 0.15 max. MaDinistecnoanntincueed ICECCJSCEFFNCGuootmmoooooEoaonrrlilllliriwwiclnllllslttaeeeeeetettaagcicebccceocrrfttrttetarddoioooontngctrtrrrrrtcoduuetircoeutpccmwrtaobuomeuuronPairatpftrwedsoepfpasrlefmtnfeeeueecrrhfCtnaarrtruivactttptmrcdghrtuoturreaauaierloreasrpnteirrndasntesearvetigufncaporeceitalrctttatartinaoegctneireoistic(pslaVVnTTPTICEesCCMBEadtjgSOOa=mySIIiChNCEnm2af2FBB1TotFieEenbb5OOnto°−e2alC5nn5ac±n11et3oc6102/0D3e05VVVVVVV+i°ts1CECCCCCyCcB2BBEEEEpo5e=======n,t3133393imnVVVVVVVuaei,,,,,,,nmdmIIIIIII°°tVVCCCCCCEEeCCWiAnn=======ocanl1103100nud00,0cdmifetemmmiA=ostAAAyn,1fpos,,feMlff=l,o==Hpw1l22.Mzia5nnGGgaGeHHfrdHokzzuzdinrisgPcrosondytiumM1n7c0u.tib0n0eloidfel:tcy5yp1cTAe209l2yed...06.0p,5sdStaiSsgSceMoM1.40ni116..nat09i0ixn3123u-:::FeECB1dmoaPslitlaeGUtyeµµtcddpcepkHnBBAAFtreaoizgtr)e Publication date: May 2002 SJD00279AED 1 2SC5557 Collector power dissipation PC (mW) Collector to emitter saturation voltage VCE(sat) (V) PC  ...