Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5609G
Silicon NPN epitaxial planar type
...
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5609G
Silicon
NPN epitaxial planar type
For general amplification Complementary to 2SA2021G
Features
Package
High forward current transfer ratio hFE
Code
SSSMini3-F2
Absolute Maximum Ratings Ta = 25°C
Pin Name
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
/ Collector-emitter voltage (Base open)
VCEO
50
V
1. Base 2. Emitter 3. Collector
e Emitter-base voltage (Collector open)
pe) Collector current
nc d ge. ed ty Peak collector current
sta tinu Collector power dissipation
a e cycle iscon Junction temperature
life d, d Storage temperature
VEBO
7
V
IC
100
mA
ICP
200
mA
PC
100
mW
Tj
125
°C
Tstg –55 to +125 °C
Marking Symbol: 3F
ten tinuur Prodtiuncuted type Electrical Characteristics Ta = 25°C±3°C
ing fo iscon Parameter
Symbol
Conditions
Min Typ Max
in n llow d d Collector-base voltage (Emitter open)
VCBO IC = 10 mA, IE = 0
60
s fo lane Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
50
a o clude pe, p Emitter-base voltage (Collector open)
VEBO IE = 10 mA, IC = 0
7
c d in e ty Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1
tinue anc Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
100
M is/Discon, mainten Forward current transfer ratio
hFE1 hFE2 *
VCE = 10 V, IC = 2 mA VCE = 2 V, IC = 100 mA
180
390
90
D ance type Collector-emitter satur...