Transistors
2SC5813
Silicon NPN epitaxial planar type
For DC-DC converter
Unit: mm
■ Features
• Low collector-emitter...
Transistors
2SC5813
Silicon
NPN epitaxial planar type
For DC-DC converter
Unit: mm
■ Features
Low collector-emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and
0.40+–00..0150 3
0.16+–00..0160
0.4±0.2
1.50–+00..0255 2.8–+00..32
automatic insertion through the tape packing
1
2
(0.95) (0.95)
5˚
(0.65)
1.9±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.90+–00..0250
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
80
V
c e. d ty Collector-emitter voltage (Base open) VCEO
80
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
5
0 to 0.1 1.1–+00..12 1.1–+00..13
V
a e cle con Collector current
IC
1.5
A
lifecy , dis Peak collector current
ICP
3
A
n u duct typed Collector power dissipation *
PC
600
mW
te tin Pro ed Junction temperature
Tj
150
°C
ur tinu Storage temperature
Tstg −55 to +150 °C
ing fo iscon Note) *: Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm
Marking Symbol: 5H
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
in n es follopwlaned d ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min Typ Max Unit
c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
80
V
tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
80
V
M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
e/D e, m Collector-base cut...
