C5845

Transistors 2SC5845 Silicon NPN epitaxial planar type For general amplification Unit: mm ■ Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and au- 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 tomatic insertion through the tape packing and the magazine pack- ing 1 2 5˚ (0.65) (0.95) (0.95) / ■ Absolute Maximum Ratings Ta = 25°C 1.9±0.1 2.90+–00..0250 Parameter Symbol Rating Unit e e) Collector-base voltage (Emitter open) c e. d typ Collector-emitter voltage (Base open) n d stag tinue Emitter-base voltage (Collector open) a e cle con Collector current lifecy , dis Peak collector current n u ct ped Collector power dissipation te tin Produ ed ty Junction temperature ur tinu Storage temperature VCBO 60 V VCEO 50 V VEBO 7 V IC 100 mA ICP 200 mA PC 200 mW Tj 150 °C Tstg −55 to +150 °C 0 to 0.1 1.1–+00..12 1.1–+00..13 10˚ Marking Symbol: 7M 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n es follopwlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions c ed in ce ty Collector-base voltage (Emitter open) tinu nan Collector-emitter voltage (Base open) M is iscon ainte Emitter-base voltage (Collector open) /D , m Collector-base cutoff current (Emitter open) D ance type Collector-emitter cutoff current (Base open) inten nce Forward current transfer ratio Ma tena Collector-emitter saturation ...