Transistors
2SC5846
Silicon NPN epitaxial planar type
SSSMini3-F1 Package
For general amplification
Unit: mm
■ Featu...
Transistors
2SC5846
Silicon
NPN epitaxial planar type
SSSMini3-F1 Package
For general amplification
Unit: mm
■ Features
0.33+–00..0025 3
0.10+–00..0025
0.15 min.
0.80±0.05 1.20±0.05
High forward current transfer ratio hFE SSS-mini type package, allowing downsizing and thinning of the
5˚
0.15 min.
equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C
0.23+–00..0025
12
(0.40) (0.40) 0.80±0.05 1.20±0.05
5˚
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open)
pe) Collector-emitter voltage (Base open)
c e. d ty Emitter-base voltage (Collector open) n d stag tinue Collector current a e cle con Peak collector current
lifecy , dis Collector power dissipation
n u duct typed Junction temperature te tin Pro ued Storage temperature
VCBO
60
V
VCEO
50
V
VEBO
7
V
IC
100
mA
ICP
200
mA
PC
100
mW
Tj
125
°C
Tstg −55 to +125 °C
0 to 0.01 0.52±0.03
0.15 max.
1: Base 2: Emitter 3: Collector SSSMini3-F1 Package
Marking Symbol: 7K
in n llowing fdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C
s fo lane Parameter
Symbol
Conditions
Min Typ Max Unit
a o clude pe, p Collector-base voltage (Emitter open) c d in e ty Collector-emitter voltage (Base open)
tinue anc Emitter-base voltage (Collector open)
M is con inten Collector-base cutoff current (Emitter open)
/Dis , ma Collector-emitter cutoff current (Base open)
D ance type Forward current transfer ratio
inten nce Collector-emitter...
