Transistors
2SC5863
Silicon NPN epitaxial planar type
For general amplification
0.40+–00..0150 3
Unit: mm 0.16+–00..0160
1.50–+00..0255 2.8–+00..32
0.4±0.2
■ Features
5˚
High collector-emitter voltage (Base open) VCEO
1
2
(0.65)
High transition frequency fT
(0.95) (0.95)
1.9±0.1 2.90+–00..0250
/ ■ Absolute Maximum Ratings Ta = 25°C
10˚
Par...
