Power Transistors
2SC5935
Silicon NPN triple diffusion planar type
For power amplification For TV vertical deflection o...
Power
Transistors
2SC5935
Silicon
NPN triple diffusion planar type
For power amplification For TV vertical deflection output
9.9±0.3
Unit: mm
4.6±0.2 2.9±0.2
3.0±0.5
■ Features
φ 3.2±0.1
15.0±0.5
Satisfactory linearity of forward current transfer ratio hFE
Dielectric breakdown voltage of the package: 5 kV
Full-pack package which can be installed to the heat sink with one
screw.
1.4±0.2 1.6±0.2
2.6±0.1
/ ■ Absolute Maximum Ratings TC = 25°C
0.8±0.1
0.55±0.15
e Parameter
Symbol Rating
Unit
13.7±0.2 4.2±0.2
Solder Dip
c type) Collector-base voltage (Emitter open) VCBO
200
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
180
V
sta tinu Emitter-base voltage (Collector open) VEBO
6
V
a e cycle iscon Collector current
IC
2
A
life d, d Peak collector current
ICP
3
A
n u duct type Collector power
PC
25
W
te tin Pro ued dissipation
Ta = 25°C
2.0
four ntin Junction temperature
Tj
150
°C
ing isco Storage temperature
Tstg −55 to +150 °C
ain oncludes fpoell,opwlaned d ■ Electrical Characteristics TC = 25°C ± 3°C
c ed in ce ty Parameter
Symbol
Conditions
tinu nan Collector-base voltage (Emitter open)
M is con inte Collector-emitter voltage (Base open)
/Dis , ma Emitter-base voltage (Collector open)
D ance type Base-emitter voltage
inten nce Collector-base cutoff current (Emitter open) Ma tena Emitter-base cutoff current (Collector open) main Forward current transfer ratio (planed Collector-emitter saturation voltage
VCBO V...
