2SC6054J

Transistors 2SC6054J Silicon NPN epitaxial planar type 0.80±0.05 For general amplification Complementary to 2SA2174J 1.60+–00..0035 1.00±0.05 Unit: mm 0.12+–00..0013  Features 3 (0.375) 0.85–+00..0035 1.60±0.05 5°  High forward current transfer ratio hFE  SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 12 0.27±0.02 (0.50)(0.50) (0.80) /  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit 5° e ) Collector-base voltage (Emitter open) c type Collector-emitter voltage (Base open) n d tage. ued Emitter-base voltage (Collector open) le s ontin Collector current a elifecyc disc Peak collector current n u ct ed, Collector power dissipation rodu d typ Junction temperature te tin ur P tinue Storagetemperature VCBO 60 V VCEO 50 V VEBO 7 V IC 100 mA ICP 200 mA PC 125 mW Tj 125 °C Tstg −55 to +125 °C 0 to 0.02 0.70–+00..0035 0.10 max. 1: Base 2: Emitter 3: Collector Marking Symbol: 7M SSMini3-F1 Package in n followinngefdodiscon  Electrical Characteristics Ta = 25°C±3°C des , pla Parameter Symbol Conditions Min Typ Max a o inclu type Collector-base voltage (Emitter open) c ued nce Collector-emitter voltage (Base open) M is ntin tena Emitter-base voltage (Collector open) isco ain Collector-base cutoff current (Emitter open) e/D e, m Collector-emitter cutoff current (Base open) D nanc e typ Forward current transfer ratio VCBO VCEO VEBO ICBO ICEO hFE IC = 10 µA, I...