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RF1S9540 Dataheets PDF



Part Number RF1S9540
Manufacturers Harris
Logo Harris
Description P-Channel MOSFET
Datasheet RF1S9540 DatasheetRF1S9540 Datasheet (PDF)

Semiconductor July 1998 IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM -15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs Features Description • -15A and -19A, -80V and -100V • rDS(ON) = 0.20Ω and 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Order.

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Semiconductor July 1998 IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM -15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs Features Description • -15A and -19A, -80V and -100V • rDS(ON) = 0.20Ω and 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly Developmental Type TA17521. Symbol D IRF9540 IRF9541 IRF9542 TO-220AB TO-220AB TO-220AB IRF9540 IRF9541 IRF9542 G S IRF9543 TO-220AB IRF9543 RF1S9540 TO-262AA RF1S9540 RF1S9540SM TO-263AB RF1S9540 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A. Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-262AA DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 1 File Number 2282.4 IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF9540, RF1S9540, RF1S9540SM IRF9541 IRF9542 IRF9543 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR Continuous Drain Current. . . TC = 100oC . . . . . . . . . . . . ........ ........ ... ... ... ... ......... ......... ID ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . PD Linear Derating Factor (Figure 1) . . . . . . . . . . . . . . . . . . . . . . -100 -100 -19 -12 -76 ±20 150 1 -80 -100 -80 V -80 -100 -80 V -19 -15 -15 A -12 -10 -10 A -76 -60 -60 A ±20 ±20 ±20 V 150 150 150 W 1 1 1 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg 960 -55 to 175 300 260 960 960 960 mJ -55 to 175 -55 to 175 -55 to 175 oC 300 300 300 oC 260 260 260 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN Drain to Source Breakdown Voltage IRF9540, IRF9542, RF1S9540, RF1S9540SM BVDSS ID = -250µA, VGS = 0V (Figure 10) -100 IRF9541, IRF9543 -80 Gate to Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) IRF9540, IRF9541, RF1S9540, RF1S9540SM VGS(TH) VGS = VDS, ID = -250µA -2 IDSS VDS = Rated BVDSS, VGS = 0V - VTCDS==1205.8oCx Rated BVDSS, VGS = 0V - ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V -19 IRF9542, IRF9543 -15 Gate to Source Leakage Current IGSS VGS = ±20V - Drain to Source On Resistance (Note 2) rDS(ON) ID = -10A, VGS = -10V IRF9540, IRF9541, (Figures 8, 9) - RF1S9540, RF1S9540SM IRF9542, IRF9543 - Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON) MAX, ID = -6A 5 (Figure 12) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge td(ON) VDD = -50V, ID ≈19A, RG = 9.1Ω, RL = 2.3Ω, - tr VGS = -10V, (Figures 17, 18) MOSFET Switching Times are Essentially - td(OFF) Independent of Operating Temperature - tf - Qg(TOT) VGS = -10V, ID = -19A, VDS = 0.8 x Rated BVDSS, - Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Qgs Operating Temperature - Qgd - TYP MAX UNITS - - V - - V - -4 V - -25 µA - -250 µA - - A - - A - ±100 nA 0.1.


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