2N3741A

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 25 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N3741A isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=-100mA ICBO Collector-Base Cutoff Current VCB=- 80V ICEO Collector-Emitter Cutoff Current VCE= -60V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB=-0.125A VBE(on) Base-Emitter On Voltage IC=-0.25A; VCE= -1V hFE-1 DC Current Gain IC=-100mA; VCE=-1V hFE-2 DC Current Gain IC=-250mA; VCE= -1V hFE-3 DC Current Gain IC=-500mA; VCE= -1V hFE-4 DC Current Gain IC=-1A; VCE= -1V 2N3741A MIN TYP. MAX UNIT -80 V -0.1 uA -1 uA -0.6 V -1 V 40 30 100 20 10 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is p...