2N5661

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 2 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N5661 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ICBO Collector-Base Cutoff Current VCB= 300V ICEO Collector-Emitter Cutoff Current VCE= 300V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A hFE-1 DC Current Gain IC=50mA; VCE= 2V hFE-2 DC Current Gain IC=500mA; VCE= 5V hFE-3 DC Current Gain IC=1A; VCE= 5V hFE-4 DC Current Gain IC=2A; VCE= 5V 2N5661 MIN TYP. MAX UNIT 300 V 0.1 uA 0.2 uA 0.4 V 0.8 V 1.2 V 1.5 V 25 25 75 15 5 NOTICE： ISC reserves the r...