2N5665

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 2.5 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N5665 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Collector-Emitter Breakdown Voltage IB=10uA ICBO Collector-Base Cutoff Current VCB= 300V ICEO Collector-Emitter Cutoff Current VCE= 300V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=3A; IB= 0.6A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat)-2 Base-Emitter Saturation Voltage IC=5A; IB= 1A hFE-1 DC Current Gain IC=500mA; VCE= 2V hFE-2 DC Current Gain IC=1A; VCE= 5V hFE-3 DC Current Gain IC=3A; VCE= 5V hFE-4 DC Current Gain IC=5A; VCE= 5V 2N5665 MIN TYP. MAX UNIT 6 V 0.1 uA 0.2 uA 0.4 V 1 V 1.2 V 1.5 V 25 25 75 10 5 NOTICE： ISC reserves the rights to m...