2N6033

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A IB Base Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 140 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6033 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=200mA ICBO Collector-Base Cutoff Current VCB= 150V ICEO Collector-Emitter Cutoff Current VCB= 80V IEBO Emitter-Base Cutoff Current VEB= 7V VCE(sat) Collector-Emitter Saturation Voltage IC= 40A; IB= 4A VBE(sat) Base-Emitter Saturation Voltage IC= 40A; IB= 4A hFE DC Current Gain IC= 40A; VCE= 2V 2N6033 MIN TYP. MAX UNIT 120 V 25 mA 10 mA 10 mA 1.0 V 2.0 V 10 50 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our product...