2N6377

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -50 A 250 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6377 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6377 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage Ic=-50mA IEBO Emitter-Base Cutoff Current VBE=-6V ICEO Collector-Emitter Cutoff Current VCE= -50V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-20A; IB=- 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-50A; IB= -10A VBE(sat)-1 Base-Emitter Saturation Voltage IC=-20A; IB=- 2A VBE(sat)-2 Base-Emitter Saturation Voltage IC=-50A; IB= -10A hFE-1 DC Current Gain IC=-1A; VCE= -4V hFE-2 DC Current Gain IC=-20A; VCE= -4V hFE-3 DC Current Gain IC=-50A; VCE=-4V MIN TYP. MAX UNIT -80 V -100 uA -0.05 mA -1.2 V -3 V -1.8 V -3.5 V 50 30 120 10 NOTICE： ISC reserves the rights to make changes of the c...